EMBEDDING CALCULATIONS FOR DEEP IMPURITY STATES IN SEMICONDUCTORS

被引：2

作者：

MILLER, NC ^{[1
]}

LEE, PM ^{[1
]}

INGLESFIELD, JE ^{[1
]}

机构：

[1] SERC DARESBURY,THEORY GRP,DARESBURY,ENGLAND

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1985年 / 51卷 / 02期

关键词：

D O I：

10.1080/13642818508240564

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：199 / 208

页数：10

共 18 条

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