3-TERMINAL DELTA-DOPED BARRIER SWITCHING DEVICE WITH S-SHAPED NEGATIVE DIFFERENTIAL RESISTANCE

被引：29

作者：

BAILLARGEON, JN ^{[1
]}

CHENG, KY ^{[1
]}

LASKAR, J ^{[1
]}

KOLODZEY, J ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 07期

关键词：

D O I：

10.1063/1.101815

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：663 / 665

页数：3

共 8 条

[1]

BELYANTSEV AM, 1986, JETP LETT+, V43, P437

[2] NEW ULTRAFAST SWITCHING MECHANISM IN SEMICONDUCTOR HETEROSTRUCTURES [J].

HESS, K ;

HIGMAN, TK ;

EMANUEL, MA ;

COLEMAN, JJ .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) :3775-3777

[3] CHARGE INJECTION OVER TRIANGULAR BARRIERS IN UNIPOLAR SEMICONDUCTOR STRUCTURES [J].

KAZARINOV, RF ;

LURYI, S .

APPLIED PHYSICS LETTERS, 1981, 38 (10) :810-812

[4] MICROWAVE FREQUENCY OPERATION OF THE HETEROSTRUCTURE HOT-ELECTRON DIODE [J].

KOLODZEY, J ;

LASKAR, J ;

HIGMAN, TK ;

EMANUEL, MA ;

COLEMAN, JJ ;

HESS, K .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (06) :272-274

[5] PERPENDICULAR ELECTRONIC TRANSPORT IN DOPING SUPERLATTICES [J].

SCHUBERT, EF ;

CUNNINGHAM, JE ;

TSANG, WT .

APPLIED PHYSICS LETTERS, 1987, 51 (11) :817-819

[6] A NEW DOUBLE HETEROSTRUCTURE OPTOELECTRONIC SWITCHING DEVICE USING MOLECULAR-BEAM EPITAXY [J].

TAYLOR, GW ;

SIMMONS, JG ;

CHO, AY ;

MAND, RS .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) :596-600

[7] REGENERATIVE SWITCHING DEVICE USING MBE-GROWN GALLIUM-ARSENIDE [J].

WOOD, CEC ;

EASTMAN, LF ;

BOARD, K ;

SINGER, K ;

MALIK, R .

ELECTRONICS LETTERS, 1982, 18 (15) :676-677

[8] THIN-MIS-STRUCTURE SI NEGATIVE-RESISTANCE DIODE [J].

YAMAMOTO, T ;

MORIMOTO, M .

APPLIED PHYSICS LETTERS, 1972, 20 (08) :269-&

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