GALLIUM AND NITROGEN ION-IMPLANTATION IN MOVPE-GROWN ZNSE/GAAS

被引：6

作者：

GEURTS, J ^{[1
]}

HERMANS, J ^{[1
]}

GLEITSMAN, G ^{[1
]}

GEYZERS, KP ^{[1
]}

SCHNEIDER, A ^{[1
]}

HEUKEN, M ^{[1
]}

HEIME, K ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST HALBLEITERTECH,W-5100 AACHEN,GERMANY

来源：

PHYSICA B | 1993年 / 185卷 / 1-4期

关键词：

D O I：

10.1016/0921-4526(93)90234-W

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report on n- and p-type doping of MOVPE-grown ZnSe layers on GaAs substrates by implantation with gallium or nitrogen and subsequent annealing. The samples were analyzed by Hall measurements, photoluminescence, Raman scattering and far-infrared reflectivity. For Ga implantation a free-carrier concentration in ZnSe of about n = 10(17) cm-3 is achieved. Furthermore, we observe that the annealing procedure leads to a considerable diffusion of Zn across the epilayer-substrate interface into the GaAs substrate, resulting in a highly p-type layer of about 1 mum thickness. This interface layer complicates the analysis of p-type ZnSe layers. However, nitrogen incorporation is evident from SIMS measurements and PL spectra.

引用

页码：174 / 178

页数：5

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