IN-SITU SOLID-PHASE EPITAXIAL-GROWTH OF C49-TISI2 ON SI(111)-7X7 SUBSTRATE

被引：8

作者：

CHOI, CK

YANG, SJ

RYU, JY

LEE, JY

PARK, HH

KWON, OJ

LEE, YP

KIM, KH

机构：

[1] KAIST,DEPT ELECTR MAT ENGN,TAEJON 305701,SOUTH KOREA

[2] ETRI,DIV SEMICOND TECHNOL,TAEJON 305606,SOUTH KOREA

[3] POHANG INST SCI & TECHNOL,DEPT PHYS,POHANG 790600,SOUTH KOREA

[4] GYEONGSANG NATL UNIV,DEPT PHYS,CHINJU 660701,SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 04期

关键词：

D O I：

10.1063/1.110007

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

C49-TiSi2 film was grown epitaxially on Si (111) substrate by depositing Ti film on Si (111)-7x7 surface followed by in situ annealing in ultrahigh vacuum. The deposition was monitored by means of reflection high energy electron diffraction as a function of the thickness of Ti film. The best result for the growth of epitaxial C49-TiSi2 was obtained from the Ti(30 ML)/Si (111)-7x7 Si (111)-7X7 sample which was annealed at 650-degrees-C for 20 min. Images of cross-sectional high resolution transmission electron microscopy shows that the silicide/silicon interface is shown to be clear and flat. The orientation relationships are TiSi2[211BAR]\\Si[011BAR], TiSi2 (120)\\Si (111) without misorientation angle. Almost the whole area of the TiSi2 layer is revealed as an epitaxial C49 structure.

引用

页码：485 / 487

页数：3

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