INFRARED-ABSORPTION AND MICROSTRUCTURE OF LI-SATURATED SI-DOPED GAAS

被引：12

作者：

CHEN, RT ^{[1
]}

SPITZER, WG ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90007

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 07期

关键词：

D O I：

10.1149/1.2129962

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1607 / 1617

页数：11

共 43 条

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[8] ELECTRICAL PROPERTIES OF LI IN GAAS [J].

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[9]

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[10]

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