ACCEPTORS IN DONOR-DOPED GAAS RESULTING FROM LI DIFFUSION

被引：40

作者：

FULLER, CS

WOLFSTIRN, KB

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1963年 / 34卷 / 07期

关键词：

D O I：

10.1063/1.1729712

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1914 / &

共 12 条

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[5]

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[8]

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[9] CHEMICAL INTERACTIONS AMONG DEFECTS IN GERMANIUM AND SILICON [J].

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[10]

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