DIFFUSION OF GERMANIUM IN SILICON

被引：53

作者：

MCVAY, GL ^{[1
]}

DUCHARME, AR ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 03期

关键词：

D O I：

10.1063/1.1662371

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1409 / 1410

页数：2

共 16 条

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[7] SILICON SELF-DIFFUSION - (CZOCHRALSKI SINGLE CRYSTAL - SI31 - TEMPERATURE DEPENDENCE - ACTIVATION ENERGY 118.5 KCAL/MOLE - 1100 TO 1300 DEGREES C - E) [J].

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[8] MEASUREMENT OF ELASTIC CONSTANTS AT LOW TEMPERATURES BY MEANS OF ULTRASONIC WAVES - DATA FOR SILICON AND GERMANIUM SINGLE CRYSTALS, AND FOR FUSED SILICA [J].

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[9]

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[10] SELF DIFFUSION IN INTRINSIC SILICON [J].

PEART, RF .

PHYSICA STATUS SOLIDI, 1966, 15 (02) :K119-&

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