RAPID PHOTOCHEMICAL DEPOSITION OF SILICON DIOXIDE FILMS USING AN EXCIMER LAMP

We have exploited the excimer light generation principle to generate large photon fluxes over a narrow band of very short wavelengths around 172 nm. By irradiating gas mixtures of silane and oxygen with this light, we have succeeded in directly photodepositing silicon dioxide films. Very high deposition rates (500 angstrom/min) have been obtained for substrate temperatures as low as 300-degrees-C. The deposited films have been characterized using ellipsometry and Fourier transform infrared spectroscopy. The influence of the deposition parameters on the film properties and their optimization are discussed. In particular, we describe the minimization of hydrogen incorporation in the films, rendering this new technique promising for applications in optical and electronic thin film processing.