HIGH-QUALITY 100A SIO2-FILMS FABRICATED BY A NEW ECR MICROWAVE PECVD PROCESS

[1] EFFECT OF POST-OXIDATION ANNEAL ON ULTRATHIN SIO2 GATE OXIDES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (16) : 1040 - 1042

[2] BATTEY J, 1986, J APPL PHYS, V60, P3136

[3] BATTEY J, 1987, IEEE ELECTRON DEVICE, V8, P148

[4] CHAU TT, IN PRESS J VAC SCI B

[5] CHARGE TRAPPING STUDIES IN SIO2 USING HIGH-CURRENT INJECTION FROM SI-RICH SIO2-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4830 - 4841

[6] LOW-TEMPERATURE DEPOSITION OF SILICON DIOXIDE FILMS FROM ELECTRON-CYCLOTRON RESONANT MICROWAVE PLASMAS [J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (06) : 2457 - 2463

[7] KERN W, 1970, RCA REV, V31, P187

[8] THERMAL-OXIDATION OF SILICON IN DRY OXYGEN GROWTH-RATE ENHANCEMENT IN THE THIN REGIME .1. EXPERIMENTAL RESULTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) : 2685 - 2693

[9] MEJIA SR, 1986, REV SCI INSTRUM, V57, P193

[10] NGUYEN TN, 1986, P MATERIALS RES SOC, V71, P505

[1] EFFECT OF POST-OXIDATION ANNEAL ON ULTRATHIN SIO2 GATE OXIDES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (16) : 1040 - 1042

[2] BATTEY J, 1986, J APPL PHYS, V60, P3136

[3] BATTEY J, 1987, IEEE ELECTRON DEVICE, V8, P148

[4] CHAU TT, IN PRESS J VAC SCI B

[5] CHARGE TRAPPING STUDIES IN SIO2 USING HIGH-CURRENT INJECTION FROM SI-RICH SIO2-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4830 - 4841

[6] LOW-TEMPERATURE DEPOSITION OF SILICON DIOXIDE FILMS FROM ELECTRON-CYCLOTRON RESONANT MICROWAVE PLASMAS [J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (06) : 2457 - 2463

[7] KERN W, 1970, RCA REV, V31, P187

[8] THERMAL-OXIDATION OF SILICON IN DRY OXYGEN GROWTH-RATE ENHANCEMENT IN THE THIN REGIME .1. EXPERIMENTAL RESULTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) : 2685 - 2693

[9] MEJIA SR, 1986, REV SCI INSTRUM, V57, P193

[10] NGUYEN TN, 1986, P MATERIALS RES SOC, V71, P505