LOW-TEMPERATURE DEPOSITION OF SILICON DIOXIDE FILMS FROM ELECTRON-CYCLOTRON RESONANT MICROWAVE PLASMAS

被引：60

作者：

HERAK, TV ^{[1
]}

CHAU, TT ^{[1
]}

THOMSON, DJ ^{[1
]}

MEJIA, SR ^{[1
]}

BUCHANAN, DA ^{[1
]}

KAO, KC ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 06期

关键词：

D O I：

10.1063/1.342815

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2457 / 2463

页数：7

相关论文

共 38 条

[1] ADAMS AC, 1983, SOLID STATE TECHNOL, V26, P135
[2] CHARACTERIZATION OF PLASMA-DEPOSITED SILICON DIOXIDE
ADAMS, AC
ALEXANDER, FB
CAPIO, CD
SMITH, TE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) : 1545 - 1551
[3] LOW-TEMPERATURE DEPOSITION OF HIGH-QUALITY SILICON DIOXIDE BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION
BATEY, J
TIERNEY, E
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) : 3136 - 3145
[4] A STUDY OF ELECTRONIC STATES IN A-SIOX AND A-SINX THIN-FILMS BY INFRARED, AUGER-ELECTRON AND X-RAY PHOTOELECTRON SPECTROSCOPIES
CHAO, SS
LUCOVSKY, G
LIN, SY
WONG, CK
RICHARD, PD
TSU, DV
TAKAGI, Y
KEEM, JE
TYLER, JE
PAI, P
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 929 - 932
[5] CLASS WH, 1985, VLSI HDB, P443
[6] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON
DEAL, BE
SKLAR, M
GROVE, AS
SNOW, EH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) : 266 - +
[7] OXIDATION OF SILICON - STRAIN AND LINEAR KINETICS
DOREMUS, RH
[J]. THIN SOLID FILMS, 1984, 122 (03) : 191 - 196
[8] VISCOUS-FLOW OF THERMAL SIO2
EERNISSE, EP
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (06) : 290 - 293
[9] EERNISSE EP, 1978, APPL PHYS LETT, V35, P8
[10] A REVISED ANALYSIS OF DRY OXIDATION OF SILICON
FARGEIX, A
GHIBAUDO, G
KAMARINOS, G
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2878 - 2880

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