DEVELOPMENT OF FOCUSED ION-BEAM SYSTEMS

被引:3
作者
AIHARA, R [1 ]
SAWARAGI, H [1 ]
THOMPSON, B [1 ]
SHEARER, MH [1 ]
机构
[1] JEOL USA INC,PEABODY,MA
关键词
D O I
10.1016/0168-583X(89)90172-9
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:212 / 217
页数:6
相关论文
共 20 条
[1]   PERFORMANCE OF A 20-200 KV FOCUSED-ION-BEAM SYSTEM WITH A NEW OPTICAL DESIGN CONCEPT [J].
AIHARA, R ;
SAWARAGI, H ;
MORIMOTO, H ;
HOSONO, K ;
SASAKI, Y ;
KATO, T ;
SHEARER, MH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01) :245-248
[2]   STABILIZATION OF AN ELECTROSTATIC LENS FOR A FOCUSED ION-BEAM SYSTEM [J].
AIHARA, R ;
OBATA, M ;
SAWARAGI, H ;
SHEARER, MH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (03) :958-961
[3]   FOCUSED SI ION-IMPLANTATION IN GAAS [J].
BAMBA, Y ;
MIYAUCHI, E ;
ARIMOTO, H ;
KURAMOTO, K ;
TAKAMORI, A ;
HASHIMOTO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10) :L650-L652
[4]  
BAN E, 1982, 6TH P S ISIAT KYOT, P121
[5]  
BROWN WL, 1981, SOLID STATE TECHNOL, V19, P1259
[6]   COMPARISON OF NPN TRANSISTORS FABRICATED WITH BROAD BEAM AND SPATIAL PROFILING USING FOCUSED BEAM ION-IMPLANTATION [J].
CHU, SD ;
CORELLI, JC ;
STECKL, AJ ;
REUSS, RH ;
CLARK, WM ;
RENSCH, DB ;
MORRIS, WG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01) :375-379
[7]   COMPOSITIONAL DISORDERING AND VERY-FINE LATERAL DEFINITION OF GAAS-ALGAAS SUPERLATTICES BY FOCUSED GA ION-BEAMS [J].
HIRAYAMA, Y ;
SUZUKI, Y ;
OKAMOTO, H .
SURFACE SCIENCE, 1986, 174 (1-3) :98-104
[8]   ELECTRON OPTICAL PROPERTIES OF 3-ELECTRODE ELECTRON LENSES [J].
KANAYA, K ;
KAWAKATSU, H ;
YAMAZAKI, H ;
SIBATA, S .
JOURNAL OF SCIENTIFIC INSTRUMENTS, 1966, 43 (07) :416-+
[9]   A 0-30 KEV LOW-ENERGY FOCUSED ION-BEAM SYSTEM [J].
KASAHARA, H ;
SAWARAGI, H ;
AIHARA, R ;
GAMO, K ;
NAMBA, S ;
SHEARER, MH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (03) :974-976
[10]   ION-SOURCE OF HIGH BRIGHTNESS USING LIQUID-METAL [J].
KROHN, VE ;
RINGO, GR .
APPLIED PHYSICS LETTERS, 1975, 27 (09) :479-481