COMPARISON OF NPN TRANSISTORS FABRICATED WITH BROAD BEAM AND SPATIAL PROFILING USING FOCUSED BEAM ION-IMPLANTATION

被引：10

作者：

CHU, SD

CORELLI, JC

STECKL, AJ

REUSS, RH

CLARK, WM

RENSCH, DB

MORRIS, WG

机构：

[1] MOTOROLA INC,SEMICOND RES & DEV LABS,PHOENIX,AZ 85064

[2] HUGHES RES LABS,MALIBU,CA 90265

[3] GE,CTR CORP RES & DEV,SCHENECTADY,NY 12345

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 01期

关键词：

D O I：

10.1116/1.583335

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：375 / 379

页数：5

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