INFRARED OPTOELECTRONIC PROPERTIES OF METAL-GERMANIUM SCHOTTKY BARRIERS

[1] CHAN EY, 1978, INT ELECTRON DEVICES, P653

[2] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3212 - &

[3] RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (04) : 395 - &

[4] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1035 - &

[5] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[6] FORMENKS VS, 1966, HDB THERMIONIC PROPE

[7] DETECTORS FOR LIGHTWAVE COMMUNICATION [J]. PHYSICS TODAY, 1977, 30 (11) : 32 - 39

[8] MELCHIOR H, 1966, IEEE T ELECTRON DEV, V13, P829

[9] MELCHOIR H, 1970, P IEEE, V58

[10] PERSONICK SD, 1977, P IEEE, V65

[1] CHAN EY, 1978, INT ELECTRON DEVICES, P653

[2] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3212 - &

[3] RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (04) : 395 - &

[4] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1035 - &

[5] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[6] FORMENKS VS, 1966, HDB THERMIONIC PROPE

[7] DETECTORS FOR LIGHTWAVE COMMUNICATION [J]. PHYSICS TODAY, 1977, 30 (11) : 32 - 39

[8] MELCHIOR H, 1966, IEEE T ELECTRON DEV, V13, P829

[9] MELCHOIR H, 1970, P IEEE, V58

[10] PERSONICK SD, 1977, P IEEE, V65