TEMPERATURE DEPENDENCE OF AVERAGE ENERGY PER ELECTRON-HOLE PAIR FOR GAMMA-RAYS IN GE(LI) DETECTORS

被引：15

作者：

SAKAI, E

机构：

[1] Chalk River Nuclear Laboratories, Atomic Energy of Canada Limited, Chalk River

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1968年 / NS15卷 / 01期

关键词：

D O I：

10.1109/TNS.1968.4324883

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The relative average energy per electron-hole pair 770K has been measured over thetemperature range 10 to 170°K in four Ge(Li) detectors irradiated with 662 keV y-rays., The change in apparent C with temperature was small and, over the temperature range 25 to 170°K varied between 1.0and 2.2% for the four detectors - a much smaller variation than that reported by Emery and Rabson.1 Copyright © 1968 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：432 / +

页数：1

共 21 条

[1] MEASUREMENTS OF FANO FACTOR AND ENERGY PER HOLE-ELECTRON PAIR IN GERMANIUM
ANTMAN, SOW
LANDIS, DA
PEHL, RH
[J]. NUCLEAR INSTRUMENTS & METHODS, 1966, 40 (02): : 272 - +
[2] BUSSOLATI C, 1964, PHYS REV, V136, P1756
[3] THE LOW TEMPERATURE CHARACTERISTICS OF CARBON-COMPOSITION THERMOMETERS
CLEMENT, JR
QUINNELL, EH
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1952, 23 (05) : 213 - 216
[4] INVESTIGATION OF ANOMALY IN RESPONSE OF SILICON SEMICONDUCTOR RADIATION DETECTORS AT LOW TEMPERATURES
DODGE, WR
DOMEN, SR
HIRSHFEL.AT
HOPPES, DD
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1965, NS12 (01) : 295 - &
[5] MEASUREMENT OF MEAN ENERGY REQUIRED TO CREATE AN ELECTRON-HOLE PAIR IN SILICON BETWEEN 6 AND 77 DEGREES K
DODGE, WR
DOMEN, SR
LEEDY, TF
SKOPIK, DM
[J]. PHYSICAL REVIEW LETTERS, 1966, 17 (12) : 653 - +
[6] ANOMALY IN RESPONSE OF SEMICONDUCTOR DETECTORS
DODGE, WR
DOMEN, SR
HOPPES, DD
HIRSHFELD, AT
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1964, NS11 (03) : 238 - +
[7] EMERY FE, 1965, PHYS REV, V140, P2089
[8] UNTERSUCHUNG VON HALBLEITER-SPERRSCHICHTZAHLERN BIS 4.2 DEGREES K
FABJAN, CW
KENAWY, M
RAUCH, H
[J]. ZEITSCHRIFT FUR PHYSIK, 1965, 188 (04): : 378 - &
[9] ENERGY FOR ELECTRON-HOLE PAIR GENERATION IN SILICON BY ALPHA PARTICLES
FABRI, G
SVELTO, V
GATTI, E
[J]. PHYSICAL REVIEW, 1963, 131 (01): : 134 - &
[10] PERFORMANCES OF A P-I-N TYPE SEMICONDUCTOR DETECTOR AT LOW TEMPERATURES
GREGOIRE, G
HEUGHEBAERT, J
LEMAITRE, G
OOSTENS, J
VANGERVEN, L
[J]. NUCLEAR INSTRUMENTS & METHODS, 1964, 28 (02): : 346 - 348

← 1 2 3 →