THE SATURATION OF LIGHT-INDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON

被引：15

作者：

ISOMURA, M

HATA, N

WAGNER, S

机构：

[1] Department of Electrical Engineering, Princeton University Princeton

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80096-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We studied the temperature and intensity dependence of the saturation of the light-induced defect density, established by high-intensity Kr+ laser illumination. The saturation value of the light-induced defect density (N(sat)) is independent of temperature below about 90-degrees-C. Above 90-degrees-C N(sat) drops with increasing temperature. This behavior can be explained by the exhaustion of a limited number of defect sites, coupled with a thermal annealing process.

引用

页码：223 / 226

页数：4

共 20 条

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