CREATION AND SATURATION OF LIGHT-INDUCED DEFECTS IN A-SI-H

被引：18

作者：

OHSAWA, M

HAMA, T

AKASAKA, T

SAKAI, H

ISHIDA, S

UCHIDA, Y

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 97-8卷

关键词：

D O I：

10.1016/0022-3093(87)90021-4

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：91 / 94

页数：4

共 6 条

[1] LIGHT-INDUCED DEGRADATION AND THERMAL RECOVERY OF THE PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON FILMS [J].

ESER, E .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (10) :3508-3515

[2] RAMAN-STUDY ON THE SILICON NETWORK OF HYDROGENATED AMORPHOUS-SILICON FILMS DEPOSITED BY A GLOW-DISCHARGE [J].

HISHIKAWA, Y ;

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KUWANO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (04) :385-389

[3] EFFECTS OF DEPOSITION TEMPERATURE AND HYDROGEN EVOLUTION ON LIGHT-INDUCED DEFECTS IN A-SI-H [J].

OHSAWA, M ;

HAMA, T ;

ICHIMURA, T ;

AKASAKA, T ;

SAKAI, H ;

ISHIDA, S ;

UCHIDA, Y .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :401-404

[4] THE ROLE OF HYDROGEN IN THE STAEBLER-WRONSKI EFFECT OF A-SI-H [J].

OHSAWA, M ;

HAMA, T ;

AKASAKA, T ;

ICHIMURA, T ;

SAKAI, H ;

ISHIDA, S ;

UCHIDA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (10) :L838-L840

[5] ANNEALING OF METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON [J].

STUTZMANN, M ;

JACKSON, WB ;

TSAI, CC .

PHYSICAL REVIEW B, 1986, 34 (01) :63-72

[6] LIGHT-INDUCED METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON - A SYSTEMATIC STUDY [J].

STUTZMANN, M ;

JACKSON, WB ;

TSAI, CC .

PHYSICAL REVIEW B, 1985, 32 (01) :23-47

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