OXYGEN IN SILICON - A POSITRON-ANNIHILATION INVESTIGATION

被引：71

作者：

DANNEFAER, S

KERR, D

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 04期

关键词：

D O I：

10.1063/1.337303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1313 / 1321

页数：9

共 33 条

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[6] INFLUENCE OF DEFECTS AND TEMPERATURE ON ANNIHILATION OF POSITRONS IN NEUTRON-IRRADIATED SILICON
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[7] ON THE EFFECT OF BACKSCATTERING OF GAMMA-QUANTA AND STATISTICS IN POSITRON-ANNIHILATION LIFETIME MEASUREMENTS
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[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1981, 26 (04): : 255 - 259
[8] POSITRON-ANNIHILATION IN THERMALLY QUENCHED POTASSIUM-CHLORIDE
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[J]. PHYSICAL REVIEW B, 1976, 13 (09): : 3715 - 3723
[9] POSITRON-ANNIHILATION STUDIES OF TRANSFORMATION OF F-CENTERS TO R CENTERS IN KCL
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[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (17): : 2667 - 2673
[10] A POSITRON STUDY OF PLASTIC-DEFORMATION OF SILICON
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KUPCA, S
HOGG, B
KERR, D
[J]. CANADIAN JOURNAL OF PHYSICS, 1983, 61 (03) : 451 - 459

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