THERMAL GENERATION CURRENTS IN HYDROGENATED AMORPHOUS-SILICON P-I-N STRUCTURES

被引：89

作者：

STREET, RA

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 13期

关键词：

D O I：

10.1063/1.103475

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dark conductivity in amorphous silicon p-i-n devices arising from thermal generation through bulk defect states is explored. The current decays slowly after a voltage is applied, due to depletion of charge from the undoped layer, and is voltage dependent due to a field-enhanced generation rate. Creation of metastable bulk defects by light soaking reversibly increases the current. The steady-state generation current is dervied from the measured relaxation time and depletion charge.

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页码：1334 / 1336

页数：3

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