MEASUREMENT OF DEEP STATES IN UNDOPED AMORPHOUS-SILICON BY CURRENT TRANSIENT SPECTROSCOPY

被引：24

作者：

KIDA, H

HATTORI, K

OKAMOTO, H

HAMAKAWA, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 12期

关键词：

D O I：

10.1063/1.336715

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4079 / 4086

页数：8

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