GROWTH MECHANISM FOR GERMANIUM DEPOSITION NEAR A SIO2-GE BOUNDARY

被引：14

作者：

SILVESTRI, VJ

SEDGWICK, TO

GHEZ, R

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1972年 / 119卷 / 02期

关键词：

D O I：

10.1149/1.2404169

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：245 / +

页数：1

共 31 条

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