DX-LIKE CENTER IN BULK GASBS

被引：21

作者：

HUBIK, P

SMID, V

KRISTOFIK, J

STEPANEK, B

SESTAKOVA, V

机构：

[1] Institute of Physics, Czech Academy of Sciences, 162 00 Prague 6

来源：

SOLID STATE COMMUNICATIONS | 1993年 / 86卷 / 01期

关键词：

D O I：

10.1016/0038-1098(93)90240-N

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Hall, conductance, capacitance transients and DLTS measurements were carried out on Czochralski grown GaSb doped with sulphur. A deep centre with a small and temperature dependent capture cross section and with a high concentration was observed. Such features together with the detected persistent photoconductivity indicate that the observed centre is sulphur related DX-like centre. Some properties of the centre are presented and discussed.

引用

页码：19 / 22

页数：4

共 23 条

[1] EFFECT OF TE AND S DONOR LEVELS ON PROPERTIES OF GAAS1-XPX NEAR DIRECT-INDIRECT TRANSITION [J].