INFRARED QUENCHING OF PERSISTENT PHOTOCONDUCTIVITY IN GAAS/ALXGA1-XAS HETEROSTRUCTURES

被引：7

作者：

HE, LX

MARTIN, KP

HIGGINS, RJ

机构：

[1] GEORGIA INST TECHNOL,SCH ELECT ENGN,ATLANTA,GA 30332

[2] GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.39.1808

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1808 / 1818

页数：11

共 20 条

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