CHARGE CONTROL AND GEOMETRIC MAGNETORESISTANCE OF A GATED ALGAAS GAAS HETEROJUNCTION TRANSISTOR

被引：7

作者：

HARRANG, JP ^{[1
]}

HIGGINS, RJ ^{[1
]}

GOODALL, RK ^{[1
]}

WALLIS, RH ^{[1
]}

JAY, PR ^{[1
]}

DELESCLUSE, P ^{[1
]}

机构：

[1] UNIV OREGON,DEPT PHYS,EUGENE,OR 97403

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 11期

关键词：

D O I：

10.1063/1.335535

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4431 / 4437

页数：7

共 17 条

[1] DETERMINATION OF THE VALENCE-BAND DISCONTINUITY BETWEEN GAAS AND (AL,GA)AS BY THE USE OF P+-GAAS-(AL,GA)AS-P--GAAS CAPACITORS
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[J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1237 - 1239
[2] CHARGE CONTROL OF THE HETEROJUNCTION TWO-DIMENSIONAL ELECTRON-GAS FOR MESFET APPLICATION
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LINH, NT
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (07) : 790 - 795
[3] PLANAR ENHANCEMENT MODE TWO-DIMENSIONAL ELECTRON-GAS FET ASSOCIATED WITH A LOW ALGAAS SURFACE-POTENTIAL
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LAVIRON, M
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CHAPLART, J
LINH, NT
[J]. ELECTRONICS LETTERS, 1982, 18 (02) : 103 - 105
[4] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES
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GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667
[5] HARRANG JP, 1985, PHYS REV B
[6] MAGNETOTRANSCONDUCTANCE MOBILITY MEASUREMENTS OF GAAS-MESFETS
JAY, PR
WALLIS, RH
[J]. ELECTRON DEVICE LETTERS, 1981, 2 (10): : 265 - 267
[7] PARABOLIC QUANTUM WELLS WITH THE GAAS-ALXGA1-XAS SYSTEM
MILLER, RC
GOSSARD, AC
KLEINMAN, DA
MUNTEANU, O
[J]. PHYSICAL REVIEW B, 1984, 29 (06): : 3740 - 3743
[8] SCHOTTKY-BARRIER HEIGHTS OF MOLECULAR-BEAM EPITAXIAL METAL-ALGAAS STRUCTURES
OKAMOTO, K
WOOD, CEC
EASTMAN, LF
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (08) : 636 - 638
[9] THEORY OF AN EXPERIMENT FOR MEASURING THE MOBILITY AND DENSITY OF CARRIERS IN THE SPACE-CHARGE REGION OF A SEMICONDUCTOR SURFACE
PETRITZ, RL
[J]. PHYSICAL REVIEW, 1958, 110 (06): : 1254 - 1262
[10] DEPENDENCE OF THE MOBILITY AND THE CONCENTRATION OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS/N-ALXGA1-XAS HETEROSTRUCTURE ON THE ALAS MOLE FRACTION
SAITO, J
NANBU, K
ISHIKAWA, T
HIYAMIZU, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (02): : L79 - L81

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