ASGA-XI COMPLEXES AS MODELS FOR THE EL2 CENTER IN GAAS

被引：19

作者：

ZHANG, QM

BERNHOLC, J

机构：

[1] Department of Physics, North Carolina State University, Raleigh

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.47.1667

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Several As antisite-interstitial complexes are considered as models for the EL2 center in GaAs. Large-scale electronic-structure calculations show that the binding energy of the complex is insufficient to account for the annealing properties of EL2. The electronic structure of the complexes is also in disagreement with the majority of the experimental data. The isolated As(Ga) remains thus the best candidate for the EL2 renter. Some of the antisites may be associated with interstitials, but the salient properties of EL2 are due to the antisite rather than to the interstitial or the complex.

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页码：1667 / 1670

页数：4

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