EL2 AND THE ELECTRONIC-STRUCTURE OF THE ASGA-ASI PAIR IN GAAS - THE ROLE OF LATTICE DISTORTION IN THE PROPERTIES OF THE NORMAL STATE

被引：32

作者：

BARAFF, GA

LANNOO, M

SCHLUTER, M

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.38.6003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：6003 / 6014

页数：12

相关论文

共 28 条

[1] ASGA ANTISITE DEFECT IN GAAS
BACHELET, GB
SCHLUTER, M
BARAFF, GA
[J]. PHYSICAL REVIEW B, 1983, 27 (04): : 2545 - 2547
[2] THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM
BARAFF, GA
KANE, EO
SCHLUTER, M
[J]. PHYSICAL REVIEW B, 1980, 21 (12): : 5662 - 5686
[3] ELECTRONIC-STRUCTURE AND BINDING-ENERGY OF THE ASGA-ASI PAIR IN GAAS - EL2 AND THE MOBILITY OF INTERSTITIAL ARSENIC
BARAFF, GA
SCHLUTER, M
[J]. PHYSICAL REVIEW B, 1987, 35 (12): : 6154 - 6164
[4] MIGRATION OF INTERSTITIALS IN SILICON
BARAFF, GA
SCHLUTER, M
[J]. PHYSICAL REVIEW B, 1984, 30 (06): : 3460 - 3469
[5] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS
BARAFF, GA
SCHLUTER, M
[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (12) : 1327 - 1330
[6] SILICON VACANCY - POSSIBLE ANDERSON NEGATIVE-U SYSTEM
BARAFF, GA
KANE, EO
SCHLUTER, M
[J]. PHYSICAL REVIEW LETTERS, 1979, 43 (13) : 956 - 959
[7] NEED FOR AN ACCEPTOR LEVEL IN THE ASGA-ASI MODEL FOR EL2
BARAFF, GA
SCHLUTER, M
[J]. PHYSICAL REVIEW B, 1987, 35 (11): : 5929 - 5932
[8] ELECTRONIC-STRUCTURE AND TOTAL-ENERGY MIGRATION BARRIERS OF SILICON SELF-INTERSTITIALS
BARYAM, Y
JOANNOPOULOS, JD
[J]. PHYSICAL REVIEW B, 1984, 30 (04): : 1844 - 1852
[9] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE
BLAKEMORE, JS
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : R123 - R181
[10] MICROSCOPIC THEORY OF ATOMIC DIFFUSION MECHANISMS IN SILICON
CAR, R
KELLY, PJ
OSHIYAMA, A
PANTELIDES, ST
[J]. PHYSICAL REVIEW LETTERS, 1984, 52 (20) : 1814 - 1817