NEED FOR AN ACCEPTOR LEVEL IN THE ASGA-ASI MODEL FOR EL2

[1] ASGA ANTISITE DEFECT IN GAAS [J]. PHYSICAL REVIEW B, 1983, 27 (04): : 2545 - 2547

[2] MIGRATION OF INTERSTITIALS IN SILICON [J]. PHYSICAL REVIEW B, 1984, 30 (06): : 3460 - 3469

[3] BINDING AND FORMATION ENERGIES OF NATIVE DEFECT PAIRS IN GAAS [J]. PHYSICAL REVIEW B, 1986, 33 (10): : 7346 - 7348

[4] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : R123 - R181

[5] INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS [J]. APPLIED PHYSICS LETTERS, 1983, 43 (03) : 302 - 304

[6] MARTIN GM, 1985, DEEP CTR SEMICONDUCT, P399

[7] SAMUELSON L, 1986, UNPUB 18TH P INT C P

[8] SPAETH JM, 1986, 4TH P INT C SEM 3 4

[9] IDENTIFICATION OF EL2 IN GAAS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (09) : 970 - 972

[10] ASGA ANTISITE DEFECTS IN GAAS [J]. PHYSICA B & C, 1983, 116 (1-3): : 398 - 403

[1] ASGA ANTISITE DEFECT IN GAAS [J]. PHYSICAL REVIEW B, 1983, 27 (04): : 2545 - 2547

[2] MIGRATION OF INTERSTITIALS IN SILICON [J]. PHYSICAL REVIEW B, 1984, 30 (06): : 3460 - 3469

[3] BINDING AND FORMATION ENERGIES OF NATIVE DEFECT PAIRS IN GAAS [J]. PHYSICAL REVIEW B, 1986, 33 (10): : 7346 - 7348

[4] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : R123 - R181

[5] INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS [J]. APPLIED PHYSICS LETTERS, 1983, 43 (03) : 302 - 304

[6] MARTIN GM, 1985, DEEP CTR SEMICONDUCT, P399

[7] SAMUELSON L, 1986, UNPUB 18TH P INT C P

[8] SPAETH JM, 1986, 4TH P INT C SEM 3 4

[9] IDENTIFICATION OF EL2 IN GAAS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (09) : 970 - 972

[10] ASGA ANTISITE DEFECTS IN GAAS [J]. PHYSICA B & C, 1983, 116 (1-3): : 398 - 403