COMPUTER-AIDED TRANSISTOR DESIGN CHARACTERIZATION AND OPTIMIZATION

[1] ARMSTRONG, IBM INT COMMUNICATIO

[2] TRANSIENT ANALYSIS AND DEVICE CHARACTERIZATION OF ACP CIRCUITS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (03) : 207 - 223

[3] IMPURITY REDISTRIBUTION AND JUNCTION FORMATION IN SILICON BY THERMAL OXIDATION [J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (04): : 933 - 946

[4] ELECTRICAL PROPERTIES OF HEAVILY DOPED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (11) : 3291 - &

[5] DAS MB, 1961, IRE T, VED 8, P15

[6] DESIGN THEORY OF JUNCTION TRANSISTORS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1953, 32 (06): : 1271 - 1312

[7] LARGE-SIGNAL BEHAVIOR OF JUNCTION TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (12): : 1761 - 1772

[8] GAJDA J, 1964, SEMICONDUCTOR PROD S, V7, P17

[9] LOCALIZED ENHANCED DIFFUSION IN NPN SILICON STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) : 323 - +

[10] GUMMEL HK, 1965, IEEE T ELECTRON DEVI, VED12, P513

[1] ARMSTRONG, IBM INT COMMUNICATIO

[2] TRANSIENT ANALYSIS AND DEVICE CHARACTERIZATION OF ACP CIRCUITS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (03) : 207 - 223

[3] IMPURITY REDISTRIBUTION AND JUNCTION FORMATION IN SILICON BY THERMAL OXIDATION [J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (04): : 933 - 946

[4] ELECTRICAL PROPERTIES OF HEAVILY DOPED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (11) : 3291 - &

[5] DAS MB, 1961, IRE T, VED 8, P15

[6] DESIGN THEORY OF JUNCTION TRANSISTORS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1953, 32 (06): : 1271 - 1312

[7] LARGE-SIGNAL BEHAVIOR OF JUNCTION TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (12): : 1761 - 1772

[8] GAJDA J, 1964, SEMICONDUCTOR PROD S, V7, P17

[9] LOCALIZED ENHANCED DIFFUSION IN NPN SILICON STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) : 323 - +

[10] GUMMEL HK, 1965, IEEE T ELECTRON DEVI, VED12, P513