THE INTERFACES A-SI-H/PD AND A-SI-H ITO - STRUCTURE AND ELECTRONIC-PROPERTIES

被引：6

作者：

HOHEISEL, M

BRUTSCHER, N

OPPOLZER, H

SCHILD, S

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 97-8卷

关键词：

D O I：

10.1016/0022-3093(87)90231-6

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：959 / 962

页数：4

共 7 条

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[3] PHYSICAL ASPECTS OF A-SI-H IMAGE SENSORS [J].

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[4] CHARACTERIZATION OF JUNCTIONS BETWEEN TRANSPARENT ELECTRODES AND A-SI-H [J].

HOHEISEL, M ;

WECZOREK, H ;

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[5]

Kempter K., 1986, Proceedings of the SPIE - The International Society for Optical Engineering, V617, P120, DOI 10.1117/12.961081

[6] INTERFACE KINETICS AT METAL CONTACTS ON A-SI-H [J].

NEMANICH, RJ ;

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STAFFORD, BL .

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[7]

OZAWA T, 1985, MATER RES SOC S P, V49, P417

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