THE GROWTH OF THIN OXIDES ON A-SI AND A-SI-H IN AN O2 PLASMA

被引：6

作者：

COLLINS, RW

TUCKERMAN, CJ

HUANG, CY

WINDISCHMANN, H

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 06期

关键词：

D O I：

10.1116/1.572927

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2077 / 2081

页数：5

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