FAST NONRADIATIVE RECOMBINATION IN SPUTTERED A-SI-H

被引：22

作者：

COLLINS, RW ^{[1
]}

VIKTOROVITCH, P ^{[1
]}

WEISFIELD, RL ^{[1
]}

PAUL, W ^{[1
]}

机构：

[1] HARVARD UNIV,GORDON MCKAY LAB,DIV APPL SCI,CAMBRIDGE,MA 02138

来源：

PHYSICAL REVIEW B | 1982年 / 26卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.26.6643

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6643 / 6648

页数：6

共 16 条

[1] IMPORTANCE OF ARGON PRESSURE IN THE PREPARATION OF RF-SPUTTERED AMORPHOUS SILICON-HYDROGEN ALLOYS
ANDERSON, DA
MODDEL, G
PAESLER, MA
PAUL, W
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (03): : 906 - 912
[2] PHOTO-LUMINESCENCE AND LIFETIME STUDIES ON PLASMA DISCHARGE A-SI
AUSTIN, IG
NASHASHIBI, TS
SEARLE, TM
LECOMBER, PG
SPEAR, WE
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) : 373 - 391
[3] MODEL FOR THE TEMPERATURE-DEPENDENCE OF PHOTO-LUMINESCENCE IN A-SI-H AND RELATED MATERIALS
COLLINS, RW
PAUL, W
[J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5257 - 5262
[4] NON-GEMINATE RADIATIVE RECOMBINATION IN SPUTTERED AND GLOW-DISCHARGE A-SI-H
COLLINS, RW
PAUL, W
[J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5263 - 5266
[5] Davis E. A., 1970, Journal of Non-Crystalline Solids, V4, P107, DOI 10.1016/0022-3093(70)90026-8
[6] ENGEMANN D, 1976, STRUCTURE EXCITATION, P37
[7] TIME RESOLVED PHOTO-LUMINESCENCE NEAR THE BAND-GAP IN AMORPHOUS SILICON
KURITA, S
CZAJA, W
KINMOND, S
[J]. SOLID STATE COMMUNICATIONS, 1979, 32 (10) : 879 - 883
[8] LUMINESCENCE AND NON-RADIATIVE DECAY IN SPUTTERED AMORPHOUS SI-H
NASHASHIBI, TS
SEARLE, TM
AUSTIN, IG
RICHARDS, K
THOMPSON, MJ
ALLISON, J
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 675 - 680
[9] PROPERTIES OF AMORPHOUS HYDROGENATED SILICON, WITH SPECIAL EMPHASIS ON PREPARATION BY SPUTTERING
PAUL, W
ANDERSON, DA
[J]. SOLAR ENERGY MATERIALS, 1981, 5 (03): : 229 - 316
[10] FAST RADIATIONLESS RECOMBINATION IN AMORPHOUS SILICON
REHM, W
FISCHER, R
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 94 (02): : 595 - 602

← 1 2 →