CHARACTERIZATION OF JUNCTIONS BETWEEN TRANSPARENT ELECTRODES AND A-SI-H

被引：12

作者：

HOHEISEL, M

WECZOREK, H

KEMPTER, K

机构：

[1] Siemens AG Research Lab, Munich, West Ger, Siemens AG Research Lab, Munich, West Ger

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1985年 / 77-8卷

关键词：

D O I：

10.1016/0022-3093(85)90920-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

SEMICONDUCTOR DEVICES

引用

页码：1413 / 1416

页数：4

共 7 条

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[2]

Holzenkampfer E., 1984, Poly-Micro-Crystalline and Amorphous Semiconductors, P575

[3]

KEMPTER K, 1985, P MRS SAN FRANCISCO

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SIGMON, TW .

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[5]

Ohsawa M., 1983, Proceedings of the International Ion Engineering Congress. The 7th Symposium (1983 International) on Ion Sources and Ion Assisted Technology (ISIAT '83) and the 4th International Conference on Ion and Plasma Assisted Techniques (IPAT '83), P1963

[6] THE THICKNESS DEPENDENCE OF EXCESS CARRIER LIFETIME AND MOBILITY IN AMORPHOUS-SILICON JUNCTIONS [J].

STEEMERS, H ;

SPEAR, WE ;

LECOMBER, PG .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 47 (05) :L83-L88

[7] SILICIDE FORMATION IN PD-A-SI-H SCHOTTKY BARRIERS [J].

THOMPSON, MJ ;

JOHNSON, NM ;

NEMANICH, RJ ;

TSAI, CC .

APPLIED PHYSICS LETTERS, 1981, 39 (03) :274-276

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