ALLOYED INTERFACE FORMATION IN THE AU-SI(111)2X1 SYSTEM STUDIED BY PHOTOEMISSION SPECTROSCOPY

被引:45
作者
IWAMI, M
TERADA, T
TOCHIHARA, H
KUBOTA, M
MURATA, Y
机构
[1] OSAKA UNIV,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN
[2] UNIV TOKYO,INST SOLID STATE PHYS,MINATO KU,TOKYO 106,JAPAN
关键词
D O I
10.1016/0039-6028(94)91248-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:115 / 126
页数:12
相关论文
共 22 条
[1]   ELECTRON TRANSFER IN DILUTE GOLD ALLOYS [J].
BARRETT, PH ;
GRANT, RW ;
SHIRLEY, DA ;
KAPLAN, M ;
KELLER, DA .
JOURNAL OF CHEMICAL PHYSICS, 1963, 39 (04) :1035-&
[2]   PHOTOEMISSION-STUDIES OF THE SILICON GOLD INTERFACE [J].
BRAICOVICH, L ;
GARNER, CM ;
SKEATH, PR ;
SU, CY ;
CHYE, PW ;
LINDAU, I ;
SPICER, WE .
PHYSICAL REVIEW B, 1979, 20 (12) :5131-5141
[3]   THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].
Brillson, L. J. .
SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326
[4]   ION OXIDATION OF SI(111) [J].
DAIMON, H ;
MURATA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (11) :L718-L720
[5]   MICROSCOPIC COMPOUND FORMATION AT THE PD-SI(111) INTERFACE [J].
FREEOUF, JL ;
RUBLOFF, GW ;
HO, PS ;
KUAN, TS .
PHYSICAL REVIEW LETTERS, 1979, 43 (24) :1836-1839
[6]   Theory of electrical double layers m adsorbed films [J].
Gurney, RW .
PHYSICAL REVIEW, 1935, 47 (06) :479-482
[8]   FORMATION OF SILICON OXIDE OVER GOLD LAYERS ON SILICON SUBSTRATES [J].
HIRAKI, A ;
MAYER, JW ;
LUGUJJO, E .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) :3643-&
[9]  
HIRAKI A, 1974, JAPAN J APPL PHY S 2, V2, P749
[10]  
HIRAKI A, 1983, SURF SCI REP, V3, P357