THE RELATIONSHIP BETWEEN OXIDE CHARGE AND DEVICE DEGRADATION - A COMPARATIVE-STUDY OF NORMAL-CHANNEL AND PARA-CHANNEL MOSFETS

被引：105

作者：

SCHWERIN, A

HANSCH, W

WEBER, W

机构：

[1] UNIV INNSBRUCK, INST EXPTL PHYS, A-6020 INNSBRUCK, AUSTRIA

[2] SIEMENS AG, DEV MODELING GRP, D-8000 MUNICH 83, FED REP GER

[3] SIEMENS AG, RES LABS, D-8000 MUNICH 83, FED REP GER

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 12期

关键词：

D O I：

10.1109/T-ED.1987.23340

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：2493 / 2500

页数：8

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