INVERSION LAYER TRANSPORT AND RADIATION HARDNESS OF SI-SIO2 INTERFACE

[1] ABSENCE OF DIFFUSION IN CERTAIN RANDOM LATTICES [J]. PHYSICAL REVIEW, 1958, 109 (05): : 1492 - 1505

[2] RADIATION HARDENING OF P-MOS DEVICES BY OPTIMIZATION OF THERMAL S102 GATE INSULATOR [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 117 - +

[3] INHOMOGENEOUS TRANSPORT REGIME IN DISORDERED MATERIALS [J]. PHYSICAL REVIEW LETTERS, 1973, 30 (15) : 699 - 702

[4] PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2151 - 2156

[5] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J]. PHYSICAL REVIEW, 1968, 169 (03): : 619 - +

[6] SUBSTRATE BIAS EFFECTS ON ELECTRON-MOBILITY IN SILICON INVERSION LAYERS AT LOW-TEMPERATURES [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (01) : 15 - 17

[7] FOWLER AB, 1978, SURFACE SCIENCE, V73, P19

[8] OXIDE-CHARGE-INDUCED IMPURITY LEVEL IN SILICON INVERSION LAYERS [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (23) : 1435 - 1437

[9] LANDWEHR G, 1975, FESTKORPERPROBLEME, V15, P49

[10] CONDUCTIVITY AND MOBILITY EDGES FOR 2-DIMENSIONAL DISORDERED SYSTEMS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (24): : 4157 - 4170

[1] ABSENCE OF DIFFUSION IN CERTAIN RANDOM LATTICES [J]. PHYSICAL REVIEW, 1958, 109 (05): : 1492 - 1505

[2] RADIATION HARDENING OF P-MOS DEVICES BY OPTIMIZATION OF THERMAL S102 GATE INSULATOR [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 117 - +

[3] INHOMOGENEOUS TRANSPORT REGIME IN DISORDERED MATERIALS [J]. PHYSICAL REVIEW LETTERS, 1973, 30 (15) : 699 - 702

[4] PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2151 - 2156

[5] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J]. PHYSICAL REVIEW, 1968, 169 (03): : 619 - +

[6] SUBSTRATE BIAS EFFECTS ON ELECTRON-MOBILITY IN SILICON INVERSION LAYERS AT LOW-TEMPERATURES [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (01) : 15 - 17

[7] FOWLER AB, 1978, SURFACE SCIENCE, V73, P19

[8] OXIDE-CHARGE-INDUCED IMPURITY LEVEL IN SILICON INVERSION LAYERS [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (23) : 1435 - 1437

[9] LANDWEHR G, 1975, FESTKORPERPROBLEME, V15, P49

[10] CONDUCTIVITY AND MOBILITY EDGES FOR 2-DIMENSIONAL DISORDERED SYSTEMS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (24): : 4157 - 4170