学术探索
学术期刊
新闻热点
数据分析
智能评审

SOME ELECTRICAL-PROPERTIES OF BI2O3 THIN-FILMS

被引：11
作者：
DOLOCAN, V
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1978年 / 45卷 / 02期
关键词：
D O I：
10.1002/pssa.2210450258
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：K155 / K157
页数：3
相关论文
共 6 条
[1]   AVALANCHE-INDUCED NEGATIVE RESISTANCE IN THIN OXIDE FILMS [J].
CHOPRA, KL .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) :184-&
[2]   DOUBLE INJECTION NEGATIVE-RESISTANCE IN MAGNETIC-FIELD [J].
DOLOCAN, V .
SOLID-STATE ELECTRONICS, 1975, 18 (03) :227-234
[3]  
DOLOCAN V, 1976, NAT C PHYS BUCHAREST, P157
[4]  
DOLOCAN V, UNPUBLISHED
[5]   CURRENT CONTROLLED NEGATIVE-RESISTANCE AND MEMORY SWITCHING EFFECT OF METAL BISMUTH OXIDE-METAL THIN-FILMS [J].
KOMORITA, K ;
SUZUKI, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (06) :913-914
[6]   TRANSPORT PROPERTIES OF TELLURIUM THIN-FILMS AND THEIR DEPENDENCE ON THICKNESS [J].
KUBOVY, A ;
JANDA, M .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1976, 35 (02) :471-476
1