EMPIRICAL TIGHT-BINDING TOTAL ELECTRONIC-ENERGY CALCULATION FOR SINH2M (N = 1 TO 6, M = 1 TO 3) CLUSTERS

被引：4

作者：

KATIRCIOGLU, S

ERKOC, S

机构：

[1] Department of Physics, Middle East Technical University, Ankara

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1993年 / 177卷 / 02期

关键词：

D O I：

10.1002/pssb.2221770212

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The stable structures of SinH2m (n = 1 to 6, m = 1 to 3) clusters are investigated by the total electronic energy calculation using an empirical tight-binding (ETB) method. It seems that bridged H-bond models are also possible for small Si(n)H(m) clusters.

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页码：373 / 378

页数：6

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