DIHYDRIDE PHASE ON SI(1 1 0) SURFACE

被引:2
作者
KATIRCIOGLU, S
CIRACI, S
机构
关键词
D O I
10.1016/0038-1098(85)90424-7
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:877 / 880
页数:4
相关论文
共 12 条
[1]   ELECTRONIC STATES AND TOTAL ENERGIES IN HYDROGENATED AMORPHOUS-SILICON [J].
ALLAN, DC ;
JOANNOPOULOS, JD ;
POLLARD, WB .
PHYSICAL REVIEW B, 1982, 25 (02) :1065-1080
[2]   HYDROGEN CHEMISORPTION ON SI - NEW TYPE OF CHEMISORPTIVE BOND [J].
APPELBAUM, JA ;
HAMANN, DR ;
TASSO, KH .
PHYSICAL REVIEW LETTERS, 1977, 39 (23) :1487-1490
[3]   DEPARTURE FROM A STABLE SIH3 PHASE ON SI(111) [J].
BUTZ, R ;
MEMEO, R ;
WAGNER, H .
PHYSICAL REVIEW B, 1982, 25 (06) :4327-4330
[4]   MONO-HYDRIDE AND DIHYDRIDE PHASES ON SILICON SURFACES - A COMPARATIVE-STUDY BY EELS AND UPS [J].
BUTZ, R ;
OELLIG, EM ;
IBACH, H ;
WAGNER, H .
SURFACE SCIENCE, 1984, 147 (2-3) :343-348
[5]   CHEMISORPTION OF HYDROGEN ON THE SI(100) SURFACE - MONOHYDRIDE AND DIHYDRIDE PHASES [J].
CIRACI, S ;
BUTZ, R ;
OELLIG, EM ;
WAGNER, H .
PHYSICAL REVIEW B, 1984, 30 (02) :711-720
[6]   HYDROGEN CHEMISORPTION ON SI(111) [J].
HO, KM ;
COHEN, ML ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1977, 15 (08) :3888-3897
[7]   REALISTIC TIGHT-BINDING MODEL FOR CHEMISORPTION - H ON SI AND GE (III) [J].
PANDEY, KC .
PHYSICAL REVIEW B, 1976, 14 (04) :1557-1570
[8]  
PANDEY KC, 1975, PHYS REV LETT, V35, P25
[9]  
SACURAI T, 1976, PHYS LETT A, V56, P204
[10]  
SACURAI T, 1976, J VAC SCI TECHNOL, V13, P807