THE EFFECTS OF ANNEALING UPON THE ACCUMULATION OF AMORPHOUSNESS IN A COMPOSITE MODEL OF DISORDER PRODUCTION

被引：25

作者：

WEBB, RP ^{[1
]}

CARTER, G ^{[1
]}

机构：

[1] UNIV SALFORD,DEPT ELECT ENGN,SALFORD M5 4WT,LANCASHIRE,ENGLAND

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1981年 / 59卷 / 1-2期

关键词：

Compendex;

D O I：

10.1080/00337578108244199

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

SEMICONDUCTOR MATERIALS

引用

页码：69 / 76

页数：8

共 14 条

[1] APPLICATION OF LOW-ANGLE RUTHERFORD BACKSCATTERING AND CHANNELING TECHNIQUES TO DETERMINE IMPLANTATION INDUCED DISORDER PROFILE DISTRIBUTIONS IN SEMICONDUCTORS [J].

AHMED, NAG ;

CHRISTODOULIDES, CE ;

CARTER, G ;

NOBES, MJ ;

TITOV, AI .

NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3) :283-288

[2] EFFECT OF IRRADIATION TEMPERATURE ON SI AMORPHIZATION PROCESS [J].

BARANOVA, EC ;

GUSEV, VM ;

MARTYNENKO, YV ;

HAIBULLIN, IB .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 25 (03) :157-162

[3] ACCUMULATION OF AMORPHOUSNESS AS A FUNCTION OF IRRADIATION FLUENCE IN A COMPOSITE MODEL OF DISORDER PRODUCTION [J].

CARTER, G ;

WEBB, R .

RADIATION EFFECTS LETTERS, 1979, 43 (01) :19-24

[4]

CARTER G, 1976, LION IMPLANTATION SE

[5]

CARTER G, 1978, RAD EFF, V37, P31

[6]

DENNIS JR, 1978, J APPL PHYS, V49, P119

[7] ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING [J].

GIBBONS, JF .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09) :1062-&

[8]

HIRVONEN JK, 1971, 2ND P INT C ION IMPL

[9]

MOREHEAD FF, 1970, RADIAT EFF, V6, P25

[10] DISPLACEMENT SPIKE CRYSTALLIZATION OF AMORPHOUS GERMANIUM DURING IRRADIATION [J].

PARSONS, JR ;

BALLUFFI, RW .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (03) :263-&

← 1 2 →