IMPURITY REDISTRIBUTION IN BI-IMPLANTED SI AFTER NANOSECOND AND PICOSECOND ND LASER-PULSE IRRADIATION

被引：4

作者：

CAMPISANO, SU

BAERI, P

RIMINI, E

MALVEZZI, AM

RUSSO, G

机构：

[1] CISE SPA,I-120100 MILANO,ITALY

[2] POLITECN MILANO,I-20100 MILANO,ITALY

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 05期

关键词：

D O I：

10.1063/1.93570

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：456 / 458

页数：3

共 13 条

[1] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :788-797

[2] ORIENTATION AND VELOCITY DEPENDENCE OF SOLUTE TRAPPING IN SI [J].

BAERI, P ;

FOTI, G ;

POATE, JM ;

CAMPISANO, SU ;

CULLIS, AG .

APPLIED PHYSICS LETTERS, 1981, 38 (10) :800-802

[3] DEPENDENCE OF TRAPPING AND SEGREGATION OF INDIUM IN SILICON ON THE VELOCITY OF THE LIQUID-SOLID INTERFACE [J].

BAERI, P ;

POATE, JM ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E ;

CULLIS, AG .

APPLIED PHYSICS LETTERS, 1980, 37 (10) :912-914

[4]

Baeri P., 1982, LASER ANNEALING SEMI

[5] SEGREGATION AND INCREASED DOPANT SOLUBILITY IN PT-IMPLANTED AND LASER-ANNEALED SI LAYERS [J].

CULLIS, AG ;

WEBBER, HC ;

POATE, JM ;

SIMONS, AL .

APPLIED PHYSICS LETTERS, 1980, 36 (04) :320-322

[6] MEASUREMENT OF THE VELOCITY OF THE CRYSTAL-LIQUID INTERFACE IN PULSED LASER ANNEALING OF SI [J].

GALVIN, GJ ;

THOMPSON, MO ;

MAYER, JW ;

HAMMOND, RB ;

PAULTER, N ;

PEERCY, PS .

PHYSICAL REVIEW LETTERS, 1982, 48 (01) :33-36

[7] CALCULATION OF CARRIER AND LATTICE TEMPERATURES INDUCED IN SI BY PICOSECOND LASER-PULSES [J].

LIETOILA, A ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1982, 40 (07) :624-626

[8] PHASE-TRANSFORMATION ON AND CHARGED-PARTICLE EMISSION FROM A SILICON CRYSTAL-SURFACE, INDUCED BY PICOSECOND LASER-PULSES [J].

LIU, JM ;

YEN, R ;

KURZ, H ;

BLOEMBERGEN, N .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :755-757

[9]

POATE JM, 1982, NATO C P SERIES

[10]

POATE JM, 1982, LASER ELECTRON BEAM

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