VARIATION OF HG INCORPORATION IN MOLECULAR-BEAM EPITAXIALLY GROWN HGCDTE STRUCTURES DUE TO GROWTH FRONT ROUGHNESS AND MISORIENTED SUBSTRATES - ROLE OF KINK SITES

被引：15

作者：

SINGH, J ^{[1
]}

ARIAS, J ^{[1
]}

机构：

[1] ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.575797

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2562 / 2569

页数：8

共 23 条

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