LONG AND MIDDLE WAVELENGTH INFRARED PHOTODIODES FABRICATED WITH HG1-XCDXTE GROWN BY MOLECULAR-BEAM EPITAXY

被引：71

作者：

ARIAS, JM

SHIN, SH

PASKO, JG

DEWAMES, RE

GERTNER, ER

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 04期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.342925

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：1747 / 1753

页数：7

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