SIMULTANEOUS OCCURRENCE OF MULTIPHASES IN INTERFACIAL REACTIONS OF ULTRAHIGH-VACUUM DEPOSITED TI THIN-FILMS ON (111)SI

被引：32

作者：

WANG, MH

CHEN, LJ

机构：

[1] Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 19期

关键词：

D O I：

10.1063/1.105995

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High resolution transmission electron microscopy in conjunction with optic-al diffractometry have been applied to identify the formation of an amorphous interlayer as well as to detect the presence of Ti5Si3, Ti5Si4, TiSi, and C49-TiSi2 in the interfacial reactions of ultrahigh vacuum (UHV) deposited Ti thin films on atomically clean (111)Si. The discovery of the formation of an amorphous interlayer and as many as four different silicide phases in the initial stages of interfacial reactions of UHV deposited Ti thin films on silicon by high resolution techniques necessitates a modification of the existing theory of the silicide formation in thin-film reactions.

引用

页码：2460 / 2462

页数：3

共 26 条

[21] A COMPARISON OF THE REACTION OF TITANIUM WITH AMORPHOUS AND MONOCRYSTALLINE SILICON [J].