INITIAL GROWTH OF TI ON SI

被引：33

作者：

VAHAKANGAS, J ^{[1
]}

IDZERDA, YU ^{[1
]}

WILLIAMS, ED ^{[1
]}

PARK, RL ^{[1
]}

机构：

[1] UNIV MARYLAND,DEPT PHYS & ASTRON,COLLEGE PK,MD 20742

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.33.8716

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8716 / 8723

页数：8

共 32 条

[1] AUGER-ELECTRON SPECTROSCOPY OF LAYERED GROWTH OF TITANIUM ON TUNGSTEN [J].

ARMSTRONG, RA .

SURFACE SCIENCE, 1975, 50 (02) :615-620

[2] ADSORPTION AND EARLY STAGES OF CONDENSATION OF AG AND AU ON W SINGLE-CRYSTAL SURFACES [J].

BAUER, E ;

POPPA, H ;

TODD, G ;

DAVIS, PR .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) :3773-3787

[3] STOICHIOMETRY AND THICKNESS OF THE INITIAL OXIDE FORMED ON CLEAN TITANIUM SURFACES DETERMINED BY QUANTITATIVE AUGER-ELECTRON SPECTROSCOPY, ELECTRON-ENERGY LOSS SPECTROSCOPY, AND MICROGRAVIMETRY [J].

BURRELL, MC ;

ARMSTRONG, NR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (04) :1831-1836

[4] CHEMICAL AND STRUCTURAL ASPECTS OF REACTION AT THE TI SI INTERFACE [J].

BUTZ, R ;

RUBLOFF, GW ;

TAN, TY ;

HO, PS .

PHYSICAL REVIEW B, 1984, 30 (10) :5421-5429

[5] CHEMICAL BONDING AND REACTIONS AT TI/SI AND TI/OXYGEN/SI INTERFACES [J].

BUTZ, R ;

RUBLOFF, GW ;

HO, PS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :771-775

[6] CHEMICAL-REACTION AND SCHOTTKY-BARRIER FORMATION AT V/SI INTERFACES [J].

CLABES, JG ;

RUBLOFF, GW ;

TAN, TY .

PHYSICAL REVIEW B, 1984, 29 (04) :1540-1550

[7] OXIDATION OF TI SILICIDE SURFACES [J].

CROS, A ;

PIRRI, C ;

DERRIEN, J .

SURFACE SCIENCE, 1985, 152 (APR) :1113-1122

[8] ELECTRONIC-STRUCTURE OF A TI(0001) FILM [J].

FEIBELMAN, PJ ;

APPELBAUM, JA ;

HAMANN, DR .

PHYSICAL REVIEW B, 1979, 20 (04) :1433-1443

[9] SI-METAL INTERFACE REACTION AND BULK ELECTRONIC-STRUCTURE OF SILICIDES [J].

FRANCIOSI, A ;

WEAVER, JH .

PHYSICA B & C, 1983, 117 (MAR) :846-847

[10] SI-CR AND SI-PD INTERFACE REACTION AND BULK ELECTRONIC-STRUCTURE OF TI-SILICIDE, V-SILICIDE, CR-SILICIDE, CO-SILICIDE, NI-SILICIDE, AND PD-SILICIDE [J].

FRANCIOSI, A ;

WEAVER, JH .

SURFACE SCIENCE, 1983, 132 (1-3) :324-335

← 1 2 3 4 →