CHARACTERIZATION OF VERTICAL-CAVITY SEMICONDUCTOR STRUCTURES

被引：14

作者：

CHRISTENSEN, DH ^{[1
]}

PELLEGRINO, JG ^{[1
]}

HICKERNELL, RK ^{[1
]}

CROCHIERE, SM ^{[1
]}

PARSONS, CA ^{[1
]}

RAI, RS ^{[1
]}

机构：

[1] BANDGAP TECHNOL CORP,BROOMFIELD,CO 80021

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 12期

关键词：

D O I：

10.1063/1.351908

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Several analytical tools are applied to characterize vertical-cavity surface-emitting laser structures grown on GaAs wafers. These epitaxial structures are amenable to x-ray, electron-beam, and optical metrologies. Cross-sectional scanning electron microscopy and transmission electron microscopy were used to measure layer thicknesses and uniformity. Photoluminescence wafer mapping was used to determine alloy composition uniformity across the wafer. Photoreflectance was also used to determine alloy composition. Cross-sectional microphotoluminescence was used to measure average alloy compositions in the top and bottom mirrors. Reflectance spectroscopy was used to characterize the cavity resonances and mirror layers. Double-crystal x-ray diffractometry (DCXRD) was used to characterize mirror layer dimensions, uniformity, and average alloy composition. Excellent agreement was found among these measurement techniques and between simulations and measurements. The results demonstrate the accuracy of the device simulation tools and the applicability of DCXRD in analyzing these structures.

引用

页码：5982 / 5989

页数：8

共 22 条

[1] REFRACTIVE-INDEX OF GA1-XALXAS [J].