Intrinsic Stress in dc Sputtered Niobium

被引：13

作者：

Booi, Peter A. A. ^{[1
]}

Livingston, Carol A. ^{[1
]}

Benz, Samuel P. ^{[1
]}

机构：

[1] NIST, Boulder, CO 80303 USA

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1993年 / 3卷 / 02期

关键词：

D O I：

10.1109/77.257236

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The intrinsic mechanical stress of dc magnetron-sputtered Nb films is characterized as a function of sputtering parameters and target erosion. The zero-stress point shifts to lower cathode voltages as the target erodes. The zero-stress point was always characterized by the same cathode current-Ar pressure relationship.

引用

页码：3029 / 3031

页数：3

共 6 条

[1] MODIFICATION OF NIOBIUM FILM STRESS BY LOW-ENERGY ION-BOMBARDMENT DURING DEPOSITION [J].