TEMPERATURE-DEPENDENCE OF CARRIER RELAXATION IN SEMICONDUCTOR-DOPED GLASSES

被引：17

作者：

BEADIE, G

SAUVAIN, E

GOMES, ASL

LAWANDY, NM

机构：

[1] BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912

[2] UNIV FED PERNAMBUCO,DEPT FIS,RECIFE,PE,BRAZIL

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.51.2180

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Two-color picosecond pump-probe measurements in semiconductor nanocrystallite doped glasses reveal nonexponential decay of photoexcited carriers. The dependence of the decay on nanocrystallite size, pump intensity, temperature, and probe wavelength are examined and discussed within the framework of continuous-time random-walk models for transport of carriers among localized trap sites. This analysis suggests that carrier transport in lower dimensions is involved in the relaxation of these nano- scale systems. © 1995 The American Physical Society.

引用

页码：2180 / 2187

页数：8

共 38 条

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