LOCALIZED VIBRATIONS OF HYDROGEN AND DEUTERIUM IN GAAS - A COMPARISON WITH GE AND SI

[1] VIBRATIONAL-SPECTRA OF HYDROGEN IN SILICON AND GERMANIUM [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 118 (02): : 463 - 481

[2] ISOLATION OF JUNCTION DEVICES IN GAAS USING PROTON BOMBARDMENT [J]. SOLID-STATE ELECTRONICS, 1969, 12 (04) : 209 - &

[3] GRUEN DM, 1976, J CHEM PHYS, V64, P5000, DOI 10.1063/1.432151

[4] PASSIVATION OF THE DOMINANT DEEP LEVEL (EL2) IN GAAS BY HYDROGEN [J]. APPLIED PHYSICS LETTERS, 1982, 41 (11) : 1078 - 1080

[5] INFRARED STUDY OF HYDROGEN-IMPLANTED AND CARBON-IMPLANTED HEAVILY DOPED, N-TYPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) : 1936 - 1945

[6] PROTON AND DEUTERON IMPLANTATIONS IN GAAS, GAP AND INP [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 53 (1-2): : 41 - 45

[7] VIBRATIONAL PROPERTIES OF HYDROGENATED AMORPHOUS GAAS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 501 - 506

[8] DIRECT EXPERIMENTAL-EVIDENCE FOR MONOSILANE FORMATION AFTER PROTON OR DEUTERON IMPLANTATION OF CRYSTALLINE SILICON [J]. PHYSICAL REVIEW B, 1985, 32 (12): : 8401 - 8404

[9] Tatarkiewicz J., 1986, Radiation Effects Letters Section, V87, P251, DOI 10.1080/01422448608209728

[10] Tatarkiewicz J., 1985, Acta Physica Polonica A, VA67, P161

[1] VIBRATIONAL-SPECTRA OF HYDROGEN IN SILICON AND GERMANIUM [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 118 (02): : 463 - 481

[2] ISOLATION OF JUNCTION DEVICES IN GAAS USING PROTON BOMBARDMENT [J]. SOLID-STATE ELECTRONICS, 1969, 12 (04) : 209 - &

[3] GRUEN DM, 1976, J CHEM PHYS, V64, P5000, DOI 10.1063/1.432151

[4] PASSIVATION OF THE DOMINANT DEEP LEVEL (EL2) IN GAAS BY HYDROGEN [J]. APPLIED PHYSICS LETTERS, 1982, 41 (11) : 1078 - 1080

[5] INFRARED STUDY OF HYDROGEN-IMPLANTED AND CARBON-IMPLANTED HEAVILY DOPED, N-TYPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) : 1936 - 1945

[6] PROTON AND DEUTERON IMPLANTATIONS IN GAAS, GAP AND INP [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 53 (1-2): : 41 - 45

[7] VIBRATIONAL PROPERTIES OF HYDROGENATED AMORPHOUS GAAS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 501 - 506

[8] DIRECT EXPERIMENTAL-EVIDENCE FOR MONOSILANE FORMATION AFTER PROTON OR DEUTERON IMPLANTATION OF CRYSTALLINE SILICON [J]. PHYSICAL REVIEW B, 1985, 32 (12): : 8401 - 8404

[9] Tatarkiewicz J., 1986, Radiation Effects Letters Section, V87, P251, DOI 10.1080/01422448608209728

[10] Tatarkiewicz J., 1985, Acta Physica Polonica A, VA67, P161