INVERTED DISTRIBUTIONS OF HOT HOLES IN UNIAXIALLY STRESSED GERMANIUM

被引：5

作者：

GAVRILENKO, VI

KALUGIN, NG

KRASILNIK, ZF

NIKONOROV, VV

GALYAGIN, AV

TSERETELI, PN

机构：

[1] Inst. of Appl. Phys., Acad. of Sci., Novgorod

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 3B期

关键词：

Semiconducting Germanium;

D O I：

10.1088/0268-1242/7/3B/170

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Compressive stress is found to improve the characteristics of all types of hot hole masers and lasers in p-Ge. Effects of the uniaxial stress of p-Ge crystal on the FIR emission in both E parallel-to H and E perpendicular-to H fields are discussed. Mechanisms of the influence of uniaxial stress on the population inversion and the stimulated emission of hot holes are revealed.

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收藏

页码：B649 / B651

页数：3

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