ELECTRON-CYCLOTRON-RESONANCE PLASMA PROCESS FOR INP PASSIVATION

被引：18

作者：

HU, YZ ^{[1
]}

LI, M ^{[1
]}

WANG, Y ^{[1
]}

IRENE, EA ^{[1
]}

ROWE, M ^{[1
]}

CASEY, HC ^{[1
]}

机构：

[1] DUKE UNIV,DEPT ELECT ENGN,DURHAM,NC 27708

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 08期

关键词：

D O I：

10.1063/1.109797

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In situ ellipsometry has been used to monitor electron cyclotron resonance (ECR) plasma oxidation of InP at room temperature in the shadow plasma between a shutter and the sample. This process leaves no detectable excess P at the InP-oxide interface. A capping layer of SiO2 was grown by ECR chemical-vapor deposition at a substrate temperature of 150-degrees-C. The samples were rapid-thermal annealed at 500-degrees-C for 1 min in an oxygen. ambient. The dielectric layers were evaluated by current-voltage and capacitance-voltage measurements on metal-oxide n-type InP capacitors.

引用

页码：1113 / 1115

页数：3

共 14 条

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