WHISKER GROWTH DURING EPITAXY OF GAAS BY MOLECULAR-BEAM EPITAXY

被引：16

作者：

MORKOC, H

STAMBERG, R

KRIKORIAN, E

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] GEN DYNAM,POMONA,CA 91711

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 04期

关键词：

D O I：

10.1143/JJAP.21.L230

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L230 / L232

页数：3

共 7 条

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[3]

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MOORE, JS .

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[5]

MORKOC H, 1982, J APPL PHYS, V53

[6] VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTH ( NEW METHOD GROWTH CATALYSIS FROM IMPURITY WHISKER EPITAXIAL + LARGE CRYSTALS SI E ) [J].

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ELLIS, WC .

APPLIED PHYSICS LETTERS, 1964, 4 (05) :89-&

[7] ON THE ORIGIN AND ELIMINATION OF MACROSCOPIC DEFECTS IN MBE FILMS [J].

WOOD, CEC ;

RATHBUN, L ;

OHNO, H ;

DESIMONE, D .

JOURNAL OF CRYSTAL GROWTH, 1981, 51 (02) :299-303

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